容量 128M
規格 8Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 75E = 133MHz
狀態 Contact ISSI
腳位數 TSOP2(54), BGA(54)
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 8M = 8M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42S16800E-75ETLI-TR 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42S81600E IS42S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command


ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.



IS42S16800E-75ETLI IS42S16800E-6BL IS42S16800E-75EBL-TR IS42S16800E-7BLI
IS42S16800E-5BL IS42S16800E-6BL-TR IS42S16800E-75EBLI IS42S16800E-7BLI-TR
IS42S16800E-5BL-TR IS42S16800E-6BLI IS42S16800E-75EBLI-TR IS42S16800E-7TL
IS42S16800E-5BLI IS42S16800E-6BLI-TR IS42S16800E-75ET IS42S16800E-7TL-TR
IS42S16800E-5BLI-TR IS42S16800E-6TL IS42S16800E-75ET-TR IS42S16800E-7TLI
IS42S16800E-5TL IS42S16800E-6TL-TR IS42S16800E-75ETL IS42S16800E-7TLI-TR
IS42S16800E-5TL-TR IS42S16800E-6TLI IS42S16800E-75ETL-TR
IS42S16800E-5TLI IS42S16800E-6TLI-TR IS42S16800E-7BL
IS42S16800E-5TLI-TR IS42S16800E-75EBL IS42S16800E-7BL-TR